IndiumV3, Main, Repository, bibRecord, 006802

Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

Identifieur interne : 006802 ( Main/Repository ); précédent : 006801; suivant : 006803

Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

Auteurs : RBID : Pascal:08-0179406

Descripteurs français

Pascal (Inist)
- Méthode MOCVD, Propriété optique, Indium Gallium Nitrure, Pyromètre, Spectre réflexion, Facteur réflexion, Semiconducteur III-V, Composé III-V, Mécanisme croissance, Dépendance température, Photoluminescence, Epitaxie phase vapeur, Méthode MOVPE, Pyrométrie, Substrat saphir, GaN, InGaN, 7855C, 8115G.

English descriptors

KwdEn :
- Growth mechanism, III-V compound, III-V semiconductors, Indium Gallium Nitrides, MOCVD, MOVPE method, Optical properties, Photoluminescence, Pyrometers, Pyrometry, Reflection spectrum, Reflectivity, Temperature dependence, VPE.

Abstract

We report a pyrometer that operates at a mid-infrared wavelength range (7-8 μm), where sapphire substrates are opaque and the reactant gases are transparent. The pyrometer also employs a novel "self-reflectance" method of emissivity correction, whereby thermal emission from the sample serves as a radiation source to measure its emissivity. The instrument was installed on a multiwafer Veeco D-125 MOCVD system and used to measure the emissivity-corrected temperature at a variety of GaN and InGaN deposition conditions. For a series of InGaN multiquantum well growth, the pyrometer was used to control the surface temperature at the critical InGaN deposition step, resulting in improved control of the photoluminescence wavelength.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 006C74

Links to Exploration step

Pascal:08-0179406

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control</title>
<author><name sortKey="Creighton, J R" uniqKey="Creighton J">J. R. Creighton</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Sandia National Laboratories, P. 0. Box 5800, MS-0601</s1>
<s2>Albuquerque, NM 87185-0601</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Breiland, W G" uniqKey="Breiland W">W. G. Breiland</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Sandia National Laboratories, P. 0. Box 5800, MS-0601</s1>
<s2>Albuquerque, NM 87185-0601</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Koleske, D D" uniqKey="Koleske D">D. D. Koleske</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Sandia National Laboratories, P. 0. Box 5800, MS-0601</s1>
<s2>Albuquerque, NM 87185-0601</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Thaler, G" uniqKey="Thaler G">G. Thaler</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Sandia National Laboratories, P. 0. Box 5800, MS-0601</s1>
<s2>Albuquerque, NM 87185-0601</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Crawford, M H" uniqKey="Crawford M">M. H. Crawford</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Sandia National Laboratories, P. 0. Box 5800, MS-0601</s1>
<s2>Albuquerque, NM 87185-0601</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">08-0179406</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0179406 INIST</idno>
<idno type="RBID">Pascal:08-0179406</idno>
<idno type="wicri:Area/Main/Corpus">006C74</idno>
<idno type="wicri:Area/Main/Repository">006802</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium Gallium Nitrides</term>
<term>MOCVD</term>
<term>MOVPE method</term>
<term>Optical properties</term>
<term>Photoluminescence</term>
<term>Pyrometers</term>
<term>Pyrometry</term>
<term>Reflection spectrum</term>
<term>Reflectivity</term>
<term>Temperature dependence</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOCVD</term>
<term>Propriété optique</term>
<term>Indium Gallium Nitrure</term>
<term>Pyromètre</term>
<term>Spectre réflexion</term>
<term>Facteur réflexion</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Mécanisme croissance</term>
<term>Dépendance température</term>
<term>Photoluminescence</term>
<term>Epitaxie phase vapeur</term>
<term>Méthode MOVPE</term>
<term>Pyrométrie</term>
<term>Substrat saphir</term>
<term>GaN</term>
<term>InGaN</term>
<term>7855C</term>
<term>8115G</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report a pyrometer that operates at a mid-infrared wavelength range (7-8 μm), where sapphire substrates are opaque and the reactant gases are transparent. The pyrometer also employs a novel "self-reflectance" method of emissivity correction, whereby thermal emission from the sample serves as a radiation source to measure its emissivity. The instrument was installed on a multiwafer Veeco D-125 MOCVD system and used to measure the emissivity-corrected temperature at a variety of GaN and InGaN deposition conditions. For a series of InGaN multiquantum well growth, the pyrometer was used to control the surface temperature at the critical InGaN deposition step, resulting in improved control of the photoluminescence wavelength.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>310</s2>
</fA05>
<fA06><s2>6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>CREIGHTON (J. R.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BREILAND (W. G.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KOLESKE (D. D.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>THALER (G.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>CRAWFORD (M. H.)</s1>
</fA11>
<fA14 i1="01"><s1>Sandia National Laboratories, P. 0. Box 5800, MS-0601</s1>
<s2>Albuquerque, NM 87185-0601</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>1062-1068</s1>
</fA20>
<fA21><s1>2008</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000173653140060</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>38 re.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>08-0179406</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report a pyrometer that operates at a mid-infrared wavelength range (7-8 μm), where sapphire substrates are opaque and the reactant gases are transparent. The pyrometer also employs a novel "self-reflectance" method of emissivity correction, whereby thermal emission from the sample serves as a radiation source to measure its emissivity. The instrument was installed on a multiwafer Veeco D-125 MOCVD system and used to measure the emissivity-corrected temperature at a variety of GaN and InGaN deposition conditions. For a series of InGaN multiquantum well growth, the pyrometer was used to control the surface temperature at the critical InGaN deposition step, resulting in improved control of the photoluminescence wavelength.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15G</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H55C</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Indium Gallium Nitrure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Indium Gallium Nitrides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Pyromètre</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Pyrometers</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Spectre réflexion</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Reflection spectrum</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Espectro reflexión</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Facteur réflexion</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Reflectivity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>VPE</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Méthode MOVPE</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Pyrométrie</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Pyrometry</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Pirometría</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Substrat saphir</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7855C</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8115G</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21><s1>112</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 006802 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 006802 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:08-0179406
   |texte=   Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri